Abstract:
Electrical measurements have been carried out in Al-SiO-Al unformed and Al-SiO-Cu pre-formed devices having insulator thicknesses in the range 50 nm - 600 nm at ambient and different temperatures and under modest vacuum with the application of DC high fields. The DC conductivity has been explained by normal Poole Frenkel model based on localized conduction.
AC measurements have also been carried out in these devices in the frequency range 100 Hz -100 KHz. The measured activation energy and the monotonic increase of conductivity suggest that the conductions mechanis1n operating in these devices are of multiphonon hopping type.
Description:
This Thesis is Submitted to the Department of Physics, University of Rajshahi, Rajshahi, Bangladesh for The Degree of Doctor of Philosophy (PhD)
